A new 4T2C pixel circuit formed on a silicon substrate is proposed to realize a high‐resolution 7.8‐μm pixel pitch AMOLED microdisplay. In order to achieve high luminance uniformity, the pixel circuit compensates its Vth variation of the MOSFET for the driving transistor internally by using self‐discharging method. Also presented are 0.5‐in Quad‐VGA and 1.25‐in wide Quad‐XGA microdisplays with the proposed pixel circuit.

A novel 4T2C pixel circuit is proposed to realize a high‐resolution 7.8‐µm pixel pitch OLED microdisplay. In order to achieve high luminance uniformity, the pixel circuit compensates its Vth variation of the MOSFET for the driving transistor internally by using self‐discharging method. 0.5‐inch Quad‐VGA and 1.25‐inch Wide Quad‐XGA microdisplays with the proposed compensation architecture are also presented.

We have fabricated 2.2‐inch full color (132‐R.G.B‐162) full‐color passive matrix OLED. Phosphorescent organic materials for red and green were used to reduce the power consumption. Fluorescent materials for blue were used because phosphorescent materials for blue are not available yet. We evaluated optical properties of phosphorescent OLED.

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