New pixel driving circuit using self‐discharging compensation method for high‐resolution OLED micro displays on a silicon backplane

Abstract

A new 4T2C pixel circuit formed on a silicon substrate is proposed to realize a high‐resolution 7.8‐μm pixel pitch AMOLED microdisplay. In order to achieve high luminance uniformity, the pixel circuit compensates its Vth variation of the MOSFET for the driving transistor internally by using self‐discharging method. Also presented are 0.5‐in Quad‐VGA and 1.25‐in wide Quad‐XGA microdisplays with the proposed pixel circuit.

4032 ppi High‐resolution OLED microdisplay

“…We had developed a 4T2C (four transistors and two capacitors) pixel driving circuit architecture to realize a high‐resolution 7.8 μm OLED microdisplay . Circuit design optimization has enabled to narrow pixel pitch from 7.8 to 6.3 μm.…”

46‐3: Distinguished Paper: 4032ppi High‐Resolution OLED Microdisplay

“…We had developed a 4T2C (four transistors and two capacitors) pixel driving circuit architecture to realize a high resolution 7.8µm OLED microdisplay [14]. Circuit design optimization has enabled to narrow pixel pitch from 7.8µm to 6.3µm.…”

Foveated imaging for near-eye displays

“…No matter for liquid crystal display (LCD) or organic light emitting diode (OLED) display, it will be a very challenging task to integrate over 36 million (6K × 6K) pixels on such a small display panel. Thanks to the tremendous efforts of panel manufactures [4][5][6][7][8][9], the VR display resolution has been pushed to around 4K × 4K recently [4], although there is still a long way to go for lowcost mass production. In addition, the new driving circuitry designs are also required [9,10] due to the much shorter addressing time for each scan line.…”