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Wet cleaning has become challenging as the feature size of semiconductor devices decreased to sub-5 nm nodes. One of the key challenges is removing various types and sizes of particles and contamination from complex and fragile 3D structures without pattern damage and film loss. Conventional physical cleaning methods, such as dual-fluid spray or megasonic cleaning, are being used for the particle removal process. However, in advanced device nodes, these methods induce pattern damage and film loss. In this paper, we describe a novel particle removal technology called Nanolift which uses a polymer film consisting of two organic resins with different functions and achieved high particle removal efficiency on various types and sizes of particles with no pattern damage and minimum film loss.

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We investigate the effect of boron (B) catalytic impurity doping (Cat-doping), a low-temperature doping method by exposing to catalytically generated dopant radicals, on hydrogenated amorphous silicon (a-Si:H) films and the influence of the electrical properties of indium tin oxide (ITO) films on the tunneling conduction of carriers through the ITO/a-Si:H interfaces. The usage of ITO films with higher carrier density and B Cat-doped a-Si:H films formed with the addition of H2 enhances carrier tunneling through the a-Si:H/ITO interfaces. We also evaluate the current density–voltage (J–V) characteristics of Si heterojunction (SHJ) solar cells with a B Cat-doped a-Si:H layer as an emitter layer. In the case of B Cat-doping with the addition of H2, we obtain a SHJ solar cell which shows a conversion efficiency (η) of 12.6% and an open-circuit voltage (Voc) of 617 mV. The postannealing of the SHJ cells is effective to improve their Voc and η. These results will lead to the application of B Cat-doping on heterojunction back-contact solar cells in the future.