We combine spectroscopic ellipsometry (SE), Fourier transform infrared spectroscopy (FT-IR), kinetic Monte Carlo simulations (KMC) and convex corner undercutting analysis in order to characterize and explain the effect of the addition of small amounts of surfactant in alkaline aqueous solutions, such as Triton X-100 in tetra methyl ammonium hydroxide (TMAH). We propose that the surfactant is adsorbed at the silicon-etchant interface as a thin layer, acting as a filter that moderates the surface reactivity by reducing the amount of reactant molecules that reach the surface. According to the SE and FT-IR measurements, the thickness of the adsorbed layer is an orientation-and concentration-dependent quantity, mostly due to the orientation dependence of the surface density of H-terminations and the concentration dependence of the relative rates of the underlying oxidation and etching reactions, which have a direct impact on the number of OH terminations. For partial OH coverage of the surface, the hydration of the OH group effectively acts as an anchoring location for the hydration shell of a surfactant molecule, thus enabling the formation of hydration bridges that amplify the adsorption density of the surfactant. At high concentration, the model explains the large reduction in the etch rate of the exact and vicinal Si{1 1 0} surfaces, and the small changes in the etch rates for the exact and vicinal Si{1 0 0} surfaces. At low concentration, it explains how the etch rate for both families is significantly reduced. The orientation and concentration dependence of the surfactant adsorption explains the dramatic differences in the micron-scale wet-etched patterns obtained using TMAH and TMAH+Triton for microelectromechanical systems applications.

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B atomic layer formation on Si1-xGex(100) (x=0, 0.3, 1) using BCl3 gas has been investigated by ultraclean low-pressure chemical vapor deposition. At 450ºC, in the case using BCl3-He-H2 gas mixture, B amount tends to increase beyond one atomic layer (6.8x1014 cm-2) with increasing BCl3 exposure time on Si0.7Ge0.3(100) and Ge(100). On the other hand, in the case using BCl3-He-Ar mixture gas, 1/3-1/2 atomic layer (2.3x1014 cm-2) formation is achieved self-limitedly with high Cl coverage on the surface. The Cl atoms on the B adsorbed Si1-xGex(100) are effectively removed by H2 introduction at 450ºC after BCl3exposure. In this way, atomically-controlled B atomic layer formation on Si1-xGex/Si(100) was demonstrated by using the self-limited surface reaction of BCl3 at 450ºC.