Present TFT‐LCD has low dynamic contrast when displaying moving pictures, such as TV and DVD. By applying a dynamic contrast compensating driving method to a TN‐mode and IPS‐mode TFT‐LCD, moving picture quality is improved more than with conventional fast response driving method.

By introducing new terminology, active-matrix OLED's advanced performance can be well characterized. "Luminous Flux" and Assured Dynamic Range" better represent the viewer's impression than previous terminology such as "front luminance" and/or "viewing angle." Compensation circuit, low-stress driving technique, CVD condition, TFT shape, and high-efficiency OLEDs are the keys to enabling low-cost a-Si AMOLED manufacturing in order to compete with other display technologies.

We have developed new driving technique, which improved the quality of moving picture on TFT-LCDs. Dynamic Contrast Compensation (DCC) method has suppressed a drop of the effective brightness. Furthermore, TFT-LCD of impulse type was realized with Super Impulse method that a combination of the black data insertion method and blinking back light systems, and it could improve the quality of the moving picture quality.

2T1C digital drive has been investigated with stable white OLEDs. A 2.5″ QVGA digital drive AMOLED prototype exhibited quite stable lifetime under constant voltage stress. The lifetime (T50) of an OLED device with 40% aperture ratio was over 5,000 h at an initial condition of 442 cd/m2 while the T50 at an initial condition of 175 cd/m2 is estimated to be over 20,000 h even under constant voltage stress. Motion artifacts are also improved with an automatic refresh rate conversion with less impact on power consumption.

A working p-type metal-oxide semiconductor field-effect transistor (MOSFET) structure, utilizing a graded-Si 1−x Ge x layer as the conducting channel, has been successfully fabricated by ultra high-vacuum chemical vapor deposition (UHVCVD). Rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films and decrease the high thermal budget which results in the strain relaxation of the graded Si 1−x Ge x layer. It is found that the proposed device exhibits suitable transistor characteristics. An extrinsic transconductance of 130 mS/mm at room temperature for a gate length of 0.6 µm has been obtained, which shows the great potential of this structure in Si-based device applications.