NewZrO 2 /Al 2 O 3 /ZrO 2 (ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO 2 and amorphous Al 2 O 3 . Thus prepared ZAZ TIT capacitors showed very small Tox.eq value of 6.3Å and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TIT capacitor was thermally robust during backend full thermal process by applying it to the final DRAM product in mass production.

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