Articles you may be interested inElectron-phonon interaction effect on the energy levels and diamagnetic susceptibility of quantum wires: Parallelogram and triangle cross section

Articles you may be interested inNegative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length Appl. Phys. Lett. 83, 701 (2003); 10.1063/1.1595150Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy Observation of negative differential resistance of a trench-type narrow InGaAs quantum-wire field-effect transistor on a (311)A InP substrate Negative differential resistance of a ridge-type InGaAs quantum wire field-effect transistor Trench-type narrow InGaAs quantum-wire field-effect transistors ͑QWR-FETs͒ have been fabricated on ͑311͒A InP V-groove substrates by hydrogen-assisted molecular-beam epitaxy. Enhanced negative differential resistance ͑NDR͒ effects with a peak-to-valley ratio ͑PVR͒ as high as 13.3 have been observed at an onset voltage of 0.16 V in the QWR-FETs at 24 K. The PVR increased with reductions in the InGaAs epitaxial layer thickness, which caused an enhanced mobility difference between the QWR and side quantum wells ͑QWs͒. This forms a velocity modulation transistor based on the real-space transfer of electrons from the high mobility QWR to the low mobility side QWs. The NDR effects were observed up to 230 K as the gate length was decreased to 50 nm. A unique feature of the QWR-FET is that NDR effects are controllable with the gate bias in a three-terminal configuration.

Articles you may be interested inEnhanced peak-to-valley current ratio in In Ga As ∕ In Al As trench-type quantum-wire negative differential resistance field-effect transistors J. Appl. Phys. 97, 034507 (2005); 10.1063/1.1851595 Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length Appl. Phys. Lett. 83, 701 (2003); 10.1063/1.1595150Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy Observation of negative differential resistance of a trench-type narrow InGaAs quantum-wire field-effect transistor on a (311)A InP substrate

Articles you may be interested inEnhanced peak-to-valley current ratio in In Ga As ∕ In Al As trench-type quantum-wire negative differential resistance field-effect transistors Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor J. Vac. Sci. Technol. B 22, 1523 (2004); 10.1116/1.1752911Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy Observation of negative differential resistance of a trench-type narrow InGaAs quantum-wire field-effect transistor on a (311)A InP substrate Negative differential resistance of a ridge-type InGaAs quantum wire field-effect transistor