Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

Abstract

Articles you may be interested inEnhanced peak-to-valley current ratio in In Ga As ∕ In Al As trench-type quantum-wire negative differential resistance field-effect transistors Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor J. Vac. Sci. Technol. B 22, 1523 (2004); 10.1116/1.1752911Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy Observation of negative differential resistance of a trench-type narrow InGaAs quantum-wire field-effect transistor on a (311)A InP substrate Negative differential resistance of a ridge-type InGaAs quantum wire field-effect transistor

Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs

“…1(a), the NDR mechanism in the trench-type QWR is interpreted as an intersubband transfer from the high-mobility fundamental level, predominantly in the QWR, to the low-mobility higher subband levels in the side QWs [4]. The absence of the NDR effect at higher temperatures, in our previous device, was due to the low mobility in the QWR layer in the higher temperature range.…”

“…By using a combination of atomic hydrogen and a dimer arsenic source, we have recently demonstrated the selective growth of trench-type InGaAs/InAlAs QWR on a ( hydrogen-assisted molecular beam epitaxy (H-MBE) [2]. We have also demonstrated the clear negative differential resistance (NDR) of a trenchtype QWR-FET at low temperature [3,4]. NDR effects have attracted much interest in relation to high-frequency oscillators and high-speed memory since the invention of the resonant tunneling diode (RTD) and the real space transfer (RST) transistor [5][6][7][8][9].…”

Enhanced peak-to-valley current ratio in InGaAs∕InAlAs trench-type quantum-wire negative differential resistance field-effect transistors

“…13 There are two other possible mechanisms for the NDR, which are the Gunn effect and a RST of the carriers to the InAlAs space layer. 13 There are two other possible mechanisms for the NDR, which are the Gunn effect and a RST of the carriers to the InAlAs space layer.…”

“…13 There are two other possible mechanisms for the NDR, which are the Gunn effect and a RST of the carriers to the InAlAs space layer. 13 Therefore, the V NDR of 0.1 V cannot be explained by an overflow of electrons from the InGaAs QWR layer into the InAlAs space layer. The energy separation, ⌬E ⌫L , between the ⌫ valley and the lowest satellite valley ͑L valley͒ of In 0.53 Ga 0.47 As, is about 0.55 eV, namely, larger than the V NDR of our device; therefore, the observed NDR cannot be explained by the Gunn effect.…”

“…11,12 A field-effect transistor ͑FET͒ with a trench-type QWR channel has pronounced NDR effects with the highest PVR of 6.2 and the V NDR as low as 0.1 V at 40 K. 13 In this work, we realized more ideal NDR effects by reducing the InGaAs epitaxial layer thickness, which caused an enhanced mobility difference between the QWR and side quantum wells ͑QWs͒. 11,12 A field-effect transistor ͑FET͒ with a trench-type QWR channel has pronounced NDR effects with the highest PVR of 6.2 and the V NDR as low as 0.1 V at 40 K. 13 In this work, we realized more ideal NDR effects by reducing the InGaAs epitaxial layer thickness, which caused an enhanced mobility difference between the QWR and side quantum wells ͑QWs͒.…”