No abstract

In order to study the dependence of the secondary electron emission yield γ on the defect states of the MgO surface in plasma display panels, cathodoluminescence (CL) spectra of MgO films, which were deposited at oxygen partial pressures of 0, 4.0×10−4, and 1.2×10−5 Torr, were measured. The CL intensities from the F (oxygen ion vacancy+one electron) and F+ (oxygen ion vacancy+one electron) centers of the MgO film that was deposited at high oxygen partial pressure (1.2×10−4 Torr), significantly increased with aging during discharge. Assuming that the probabilities of transitions are proportional to the measured CL intensities from the F and F+ bands of the MgO films, the γi values of MgO films for Ne and Xe ions, which include the F and F+ bands, were calculated. The tendencies of the breakdown voltages calculated using these γi values were consistent with those of the measured voltages of the MgO films. These calculated results suggested that the influence of the F and F+ bands on the γi values for Xe ions is large compared with that for Ne ions, and that the γi value of the MgO film for Xe ions increases with increasing numerical densities of the F and F+ centers, especially for F+ centers.

The surface voltage and charge on the dielectric barrier in a plasma display panel (PDP)-like microdischarge have been measured using an electrooptic crystal. The initiation of discharge starts the accumulation of surface charges and the charges spread uniformly over the entire region of the electrode surface under the condition of a time resolution of 0.1 ms. For the case of a gas mixture of Ne+Xe (10%), the plasma light emission at the cathode side is much stronger than that at the anode, however, the quantity of surface charges accumulated at both electrodes are the same. The surface charges at various gas pressures are also measured as functions of externally applied voltage and total charge flowing in an external circuit estimated from the discharge current. These characteristics for the microdischarge are compared with the results obtained for macrodischarge. It is found that the voltage difference on the barrier surface between the ground and high-voltage electrodes, caused by the accumulated charges, is an important factor in determining the barrier discharge.

We have developed a prototype full-resolution Super Hi-Vision (SHV) plasma display panel (PDP) that has 4,320 scanning lines and over 33-million pixels. Highly realistic SHV programs were the first successfully reproduced on a 145-inch diagonal PDPs with a 0.417-mm pixel pitch by applying a new panel driving method.

A 32b PowerPCTM system-on-a-chip supporting dynamic voltage supply and dynamic frequency scaling operates from 366MHz at 1.8V and 600mW down to I50MHz at 1.OV and 53mW in a 0.18ym CMOS process. Maximum supply change without PLL relock is 1 OmV/ps. Processor state savehestore enables a deep-sleep state.