The nanostructure of a single quantum wire of the silicon: poly[n-decyl-(S)-2-methylbutylsilane] molecule on a hydrophobic ultrasmooth sapphire plate has been observed by atomic force microscopy (AFM). The backbone structure of this molecule is considered to be a rigid rodlike helix and to be fixed securely into a preferential single-screw-sense. The obtained result of the AFM shows that the polysilane molecule, with a length of about 2 µm, consists of very long rod-like segments linked by kinks as expected for this backbone structure. Network-like aggregated nanostructures of these molecules were also observed for the sample prepared from concentrated solvents.

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We show for the first time that a thin film of the organic-inorganic hybrid polymer polysilane can be used as an active element in a light-emitting diode with a large active area that generates ultraviolet light at low temperature. The thin-film device emitted 3.35 eV (370 nm) light with moderate efficiency (0.01–0.06%) at temperatures below 210 K. The origin of the emission was assigned to the 1B u exciton on the one-dimensional silicon chain. The reason for the decrease of the emission efficiency above 50 K was discussed in relation to the order-disorder phase transition in the polysilane thin film.

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