A complete empirical large-signal model for highpower AlGaN/GaN HEMTs (GaN HEMT) utilizing an improved drain current ( ) formulation with self-heating and chargetrapping modifications is presented. The new drain current equation accurately models the asymmetric bell-shaped transconductance ( ) for high over a large range of biases. A method of systematically employing dynamic IV behavior using pulsedgate IV and pulsed-gate-pulsed-drain IV datasets over a wide variety of thermal and charge-trapping conditions is presented. The composite nonlinear model accurately predicts the dynamic IV behavior, -parameters up to 10 GHz, and large-signal wideband harmonic behavior for a multitude of quiescent gate-source and drain-source biases as well as third-order intermodulation distortion (IM3).Index Terms-AlGaN/GaN, gallium nitride, GaN, HEMT, high power, large-signal, model.

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