A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects

Abstract

A complete empirical large-signal model for highpower AlGaN/GaN HEMTs (GaN HEMT) utilizing an improved drain current ( ) formulation with self-heating and chargetrapping modifications is presented. The new drain current equation accurately models the asymmetric bell-shaped transconductance ( ) for high over a large range of biases. A method of systematically employing dynamic IV behavior using pulsedgate IV and pulsed-gate-pulsed-drain IV datasets over a wide variety of thermal and charge-trapping conditions is presented. The composite nonlinear model accurately predicts the dynamic IV behavior, -parameters up to 10 GHz, and large-signal wideband harmonic behavior for a multitude of quiescent gate-source and drain-source biases as well as third-order intermodulation distortion (IM3).Index Terms-AlGaN/GaN, gallium nitride, GaN, HEMT, high power, large-signal, model.

Equivalent circuit GaN HEMT model accounting for gate-lag and drain-lag transient effects

“…A new drain-current function, based on a modified version of the Angelov model which is capable of reproducing the P-IV charactersitic of this device, is given in [8]. The model is defined as…”

LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT

“…Compared with physical based model [2] and table based empirical model [3], empirical large signal equivalent circuit model (LSECM) is more simple and easier to be implemented in microwave commercial simulation software, and has been widely used in GaAs and SiC based devices [4,5]. However, accurate LSECM for GaN based devices is still a major topic of discussion due to the existence of thermal effects and trapping related dispersion in GaN HEMT devices [2,3,6,7]. A common way to build the LSECM starts from small gate periphery GaN HEMT, and extends it into application of large gate periphery or even multi-cell large size devices by using scalable technique.…”

An improved empirical large-signal model for the GaAs- and GaN-based HEMTs

“…As the development of wide bandgap semiconductors, the GaN‐based high electron‐mobility transistors (HEMTs) have become a promising solution for high‐power microwave electronics [1]. This is primarily due to the desirable characteristics of GaN HEMTs such as high breakdown voltage, high power density, and wideband frequency operation [2]. Many applications such as mixers, oscillators, and high‐efficiency power amplifiers have been developed using GaN HEMT technology.…”

“…In designing applications of the microwave circuits with computer‐aided design (CAD) techniques, accurate large‐signal transistor models are needed to capture device characteristics and to facilitate circuit design [3]. As a relatively immature, the high‐power‐density GaN HEMT devices exhibit significant thermal and trapping effects due to the dissipated power and the applied quiescent biases [2]. The integration of these effects in the nonlinear model is vital in predicting the large‐signal behaviors of GaN HEMTs [4].…”

“…Due to the complexity in heterostructures of HEMTs and the associated physical characteristics, they are most appropriately modeled based on semi‐empirical approach with parameters extracted from measurements [6]. In the past years, many equation‐based large‐signal HEMT models have been developed [1–7]. Among them, the improved I–V models proposed in [4] can be regarded as an extension of the well‐known Angelov model [6].…”