In order to extract electrical properties of multicrystalline silicon (Mx-Si) solar cells precisely, current-voltage (I-V) measurement in the dark condition was carried out. A new two-diode model, which includes a diffusion-current dominant area (DCA) and a recombination-current dominant area (RCA), with nonequivalent series resistances, was proposed as a new equivalent circuit. Electrical properties as fitting parameters were successfully extracted using a successive approximation method. This characterization derived J 01 and J 02 , which are the diode saturation current densities for n ¼ 1 and 2 diodes, respectively. To ensure this diode model, temperature characteristics were measured, and the validity of this model was shown through calculation of the energy band gap from J 01 . J 01 and J 02 indicate a power factor and a loss factor of solar cells, respectively, which are newly proposed to classify solar cell performance.

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In this paper, the potential for sub-10-nm junction formation of partial-melt laser annealing (PMLA), which is a combination of solid-phase regrowth and heat-assisted laser annealing (HALA), is demonstrated. HALA and PMLA are effective for reducing laser-energy density for dopant activation and for improving heating uniformity of device structure. The absence of melting at the dopant profile tail for PMLA results in a negligibly small diffusion at this region. A high activation rate is achievable by melting the upper part of the amorphous-silicon layer. The obtained sheet resistance of 10-nm-deep junctions was about 700 Ω/sq. for both n + /p and p + /n junctions. These results imply that PMLA is applicable for much shallower junction formation.