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The eŠect of background gas environment on the purity of reactively-deposited nitrideˆlms has been studied. Especially, the relation between the oxygen background pressure and its incorporation into the TiNˆlm is investigated in this study. We have developed a UHV sputtering system and deposited TiNˆlms under two diŠerent base pressure conditions: one was a UHV condition less than 10 -6 Pa, and the other was 1×10 -4 Pa of oxygen. The oxygen content of theˆlms was examined with X-ray photoelectron spectroscopy. While no trace of oxygen was detected in the TiNˆlm deposited under the UHV condition, 10 at. of oxygen was observed in that deposited with the O 2 introduction. The extent of O 2 incorporation into the TiNˆlm is discussed based on the diŠerence in sticking characteristics of oxygen and nitrogen on the titanium surface.