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In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

Abstract:Carrier aggregation is one of the key features to increase the data rate given a scarce bandwidth spectrum. This paper describes the design of a high performance receiver suitable for carrier aggregation in LTE-Advanced and future 5 G standards. The proposed architecture is versatile to support legacy mode (single carrier), inter-band carrier aggregation, and intra-band carrier aggregation. Performance with carrier-aggregation support is as good as legacy receivers. Contradicting requirements of high linearity and the low noise is satisfied with the single-gm receiver architecture in addition to supporting carrier aggregation. The proposed cascode-shutoff low-noise trans-conductance amplifier (LNTA) achieves 57.1 dB voltage gain, 1.76 dB NF (noise figure) , and −6.7 dBm IIP3 (Third-order intercept point) with the power consumption of 21.3 mW in the intra-band carrier aggregation scenario. With legacy mode, the same receiver signal path achieves 56.6 dB voltage gain, 1.33 dB NF, and −6.2 dBm IIP3 with a low power consumption of 7.4 mW.

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