Graphene nanoribbons (GNRs) with widths down to 16 nm have been characterized for their currentcarrying capacity. It is found that GNRs exhibit an impressive breakdown current density, on the order of 10 8 A/cm 2 . The breakdown current density is found to have a reciprocal relationship to GNR resistivity and the data fit points to Joule heating as the likely mechanism of breakdown. The superior current-carrying capacity of GNRs will be valuable for their application in on-chip electrical interconnects. The thermal conductivity of sub-20 nm graphene ribbons is found to be more than 1000 W/m-K.Keywords: Graphene, Breakdown current density, Nano ribbons, Maximum current * raghu@gatech.edu, Ph: 404 385 6463 2 Graphene is a promising electronic material because of many interesting properties like ballistic transport 1 , high intrinsic mobility 2 , and width-dependent bandgap 3 . Graphene, in its 2D form, has been shown to have a high thermal conductivity 4 of around 5000 W/m-K pointing to its potential use as an on-chip heat spreader.Graphene nano ribbons (GNRs) have been predicted to be superior to Cu in terms of resistance per unit length 5 for use as on-chip interconnects. A high current-carrying capacity is critical for interconnect applications and reliability. There have been a number of studies on carbon nanotube (CNT) breakdown current density, and the current-carrying capacity of single-walled CNTs 6 is found to be on the order of 10 8 A/cm 2 ; in carbon nanofibers, the breakdown current density (J BR ) has been measured 7 to be around 5x10 6 A/cm 2 . Electrical breakdown has been used to burn away successive shells in a multi-wall CNT 8,9 . More recently, electrical breakdown has been used to obtain semiconducting CNTs from a mixture of CNTs since metallic ones burn away at a lower breakdown voltage 10 . Theoretical projections suggest that J BR of graphene should be on the same order as for CNTs. However, little experimental evidence exists on the electrical breakdown of either 2D graphene or 1D GNRs. In this work, it is experimentally shown that GNRs demonstrate an impressive J BR . A simple relation between J BR and nanowire resistivity is seen to emerge from the experimental data.Few-layer graphene (1-5 layers) is used as the starting material (see supporting material 11 ).Each device consists of parallel ribbons fabricated between sets of electrodes, Fig. 1. The ribbon width between a pair of electrodes is designed to be the same for all the parallel ribbons. The range of widths studied in this work is 16nm

Abstract-Graphene nanoribbon interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given line-width (18nm

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels reported to date (down to 50 nm) and remarkably high on-current (up to 470 µA µm -1 at 1 V drain-to-source voltage) which is comparable to flexible graphene or crystalline silicon FETs. This is achieved using a new transfer method wherein contacts are initially patterned on the rigid TMD growth substrate with nanoscale lithography, then coated with a polyimide (PI) film which becomes the flexible substrate after release, with the contacts and TMD. We also apply this transfer process to other TMDs, reporting the first flexible FETs with MoSe2 and record on-current for flexible WSe2 FETs. These achievements push 2D semiconductors closer to a technology for low-power and high-performance flexible electronics.For several years, the "Internet-of-Things" (IoT) has been increasingly prevalent in the forecast of future electronics. From monitoring the environment and machines around us to the human body, IoT envisions electronics physically present in every aspect of our daily lives. While some devices may be realized on rigid silicon, there is a need for electronics with new non-planar form factors 1,2 , which are thin and light, and can be conformally attached to objects with unusual shapes, on the human skin, or even implanted into the human body 1 . With these applications in mind, we need to realize electronics on flexible substrates that are robust to mechanical strain, easy to integrate, and capable of low-power consumption and high performance at the nanoscale 2,3 .Recent studies have suggested that 2D materials are good candidates for flexible substrates, because of their lack of dangling bonds, good carrier mobility in atomically thin (sub-1 nm) layers, reduced

Capacitive micromachined ultrasonic transducer (CMUT) technology has enjoyed rapid development in the last decade. Advancements both in fabrication and integration, coupled with improved modelling, has enabled CMUTs to make their way into mainstream ultrasound imaging systems and find commercial success. In this review paper, we touch upon recent advancements in CMUT technology at all levels of abstraction; modeling, fabrication, integration, and applications. Regarding applications, we discuss future trends for CMUTs and their impact within the broad field of biomedical imaging.

A single-step doping method capable of high resolution n- and p-type doping of large area graphene is presented. Thin films of hydrogen silsesquoxane on exfoliated graphene are used to demonstrate both electron and hole doping through control of the polymer cross-linking process. This dual-doping is attributed to the mismatch in bond strength of the Si–H and Si–O bonds in the film as well as out-gassing of hydrogen with increasing cross-linking. A high-resolution graphene p-n junction is demonstrated using this method.