The efficient transfer of energy between organic and inorganic semiconductors is a widely sought after property, but has so far been limited to the transfer of spin-singlet excitons. Here we report efficient resonant-energy transfer of molecular spin-triplet excitons from organic semiconductors to inorganic semiconductors. We use ultrafast optical absorption spectroscopy to track the dynamics of triplets, generated in pentacene through singlet exciton fission, at the interface with lead selenide (PbSe) nanocrystals. We show that triplets transfer to PbSe rapidly (<1 ps) and efficiently, with 1.9 triplets transferred for every photon absorbed in pentacene, but only when the bandgap of the nanocrystals is close to resonance (±0.2 eV) with the triplet energy. Following triplet transfer, the excitation can undergo either charge separation, allowing photovoltaic operation, or radiative recombination in the nanocrystal, enabling luminescent harvesting of triplet exciton energy in light-emitting structures.
Fluorene‐free perovskite light‐emitting diodes (LEDs) with low turn‐on voltages, higher luminance and sharp, color‐pure electroluminescence are obtained by replacing the F8 electron injector with ZnO, which is directly deposited onto the CH3NH3PbBr3 perovskite using spatial atmospheric atomic layer deposition. The electron injection barrier can also be reduced by decreasing the ZnO electron affinity through Mg incorporation, leading to lower turn‐on voltages.
In recent years, organometal halide
perovskite materials have attracted
significant research interest in the field of optoelectronics. Here,
we introduce a simple and low-temperature route for the formation
of self-assembled perovskite nanocrystals in a solid organic matrix.
We demonstrate that the size and photoluminescence peak of the perovskite
nanocrystals can be tuned by varying the concentration of perovskite
in the matrix material. The physical origin of the blue shift of the
perovskite nanocrystals’ emission compared to its bulk phase
is also discussed.
Recent research has pushed the efficiency of colloidal quantum dot solar cells toward a level that spurs commercial interest. Quantum dot/metal oxide bilayers form the most efficient colloidal quantum dot solar cells, and most studies have advanced the understanding of the quantum dot component. We study the interfacial recombination process in depleted heterojunction colloidal quantum dot (QD) solar cells formed with ZnO as the oxide by varying (i) the carrier concentration of the ZnO layer and (ii) the density of intragap recombination sites in the QD layer. We find that the open-circuit voltage and efficiency of PbS QD/ZnO devices can be improved by 50% upon doping of the ZnO with nitrogen to reduce its carrier concentration. In contrast, doping the ZnO did not change the performance of PbSe QD/ZnO solar cells. We use X-ray photoemission spectroscopy, ultraviolet photoemission spectroscopy, transient photovoltage decay measurements, transient absorption spectroscopy, and intensity-dependent photocurrent measurements to investigate the origin of this effect. We find a significant density of intragap states within the band gap of the PbS quantum dots. These states facilitate recombination at the PbS/ZnO interface, which can be suppressed by reducing the density of occupied states in the ZnO. For the PbSe QD/ZnO solar cells, where fewer intragap states are observed in the quantum dots, the interfacial recombination channel does not limit device performance. Our study sheds light on the mechanisms of interfacial recombination in colloidal quantum dot solar cells and emphasizes the influence of quantum dot intragap states and metal oxide properties on this loss pathway.
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