No abstract

Laser forming is a flexible control process that has a wide spectrum of applications; particularly, laser tube bending. It offers the perfect solution for many industrial fields, such as aerospace, engines, heat exchangers, and air conditioners. A high power pulsed Nd-YAG laser with a maximum average power of 300 W emitting at 1064 nm and fiber-coupled is used to irradiate stainless steel 304 (SS304) tubes of 12.7 mm diameter, 0.6 mm thickness and 70 mm length. Moreover, a motorized rotation stage with a computer controller is employed to hold and rotate the tube. In this paper, an experimental investigation is carried out to improve the laser tube bending process by enhancing the absorption coefficient of the material and the mechanical formability using laser softening heat treatment. The material surface is coated with an oxidization layer; hence, the material absorption of laser light is increased and the temperature rapidly rises. The processing speed is enhanced and the output bending angle is increased to 1.9° with an increment of 70% after the laser softening heat treatment.

No abstract

The present study focuses on the structural and electrical properties of doped zinc-lead iodide (Zn-PbI 2 ) as-deposited film. Lead iodide (PbI 2 ) nanostructure was successfully prepared by thermal evaporation method on a glass substrate at room temperature. The analysis, characterization, and structural properties of PbI 2 were achieved using X-ray diffraction (XRD) and scanning electron microscopy. The PbI 2 was polycrystalline and had a hexagonal structure as proved using XRD. The measured values are in agreement with other experimental and theoretical data. Furthermore, the present research studied the effect of doping on the physical properties of lead iodide with zinc dopants at different weights (0.02, 0.04, 0.06, and 0.08) mg. The electrical properties of the fabricated metal-semiconductor-metal photodetector based on PbI 2 and Pb 1−x Zn x I 2 layers prepared on glass substrates by thermal evaporation method were investigated. The obtained results of Schottky barrier heights for Pb 0.98 Zn 0.02 I 2 were significant. The current-voltage characteristics of the Pb 0.98 Zn 0.02 I 2 thin film have acted as a Schottky contact in dark and under white light, 460-nm light. The light responsivity has shown a peak at 460-nm chopped light. At a bias voltage of 1, 3, and 5 V, the photocurrent rise and decay times were investigated. The device has shown faster response times for 460-nm light. This fast response was attributed to the high quality of polycrystalline and showed a high quantum efficiency of 9.19 × 10 2 % when it was illuminated by 460-nm light under the bias of 3 V.

No abstract