Lead iodide (PbI2) thin films were successfully prepared by thermal evaporation method on a glass substrate at room temperature. The structural analysis of these films was done by XRD. The results revealed that the crystallite size increases when increasing the film thickness and annealing temperature. In addition, the preferred growth orientation was 001 for all the samples.

Lead iodide (PbI2) nanostructures were successfully prepared using the thermal evaporation method on a glass substrate at room temperature. The structural properties were analyzed using X-ray diffraction, which revealed that the crystal size increases as thickness increases. Crystal size was calculated to be in the range 27.3–61.08 nm. In addition, the preferred growth orientation was (001) for all samples. The surface morphologies using scanning electron microscopy have shown an increasing of grain size with increasing thickness. Also, optical properties using ultraviolet–visible spectroscopy were researched as a function of thickness. The absorption data have indicated direct transmission with optical energy band gap that varies continuously from 2.35 to 2.40 eV at room temperature. The refractive index and optical dielectric constant were investigated to verify the suitability of the model for electro-optical systems. The low fluctuation in energy band gap indicates that the grain size is quite small. The obtained results are in good agreement with experimental and theoretical data.

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The present study focuses on the structural and electrical properties of doped zinc-lead iodide (Zn-PbI 2 ) as-deposited film. Lead iodide (PbI 2 ) nanostructure was successfully prepared by thermal evaporation method on a glass substrate at room temperature. The analysis, characterization, and structural properties of PbI 2 were achieved using X-ray diffraction (XRD) and scanning electron microscopy. The PbI 2 was polycrystalline and had a hexagonal structure as proved using XRD. The measured values are in agreement with other experimental and theoretical data. Furthermore, the present research studied the effect of doping on the physical properties of lead iodide with zinc dopants at different weights (0.02, 0.04, 0.06, and 0.08) mg. The electrical properties of the fabricated metal-semiconductor-metal photodetector based on PbI 2 and Pb 1−x Zn x I 2 layers prepared on glass substrates by thermal evaporation method were investigated. The obtained results of Schottky barrier heights for Pb 0.98 Zn 0.02 I 2 were significant. The current-voltage characteristics of the Pb 0.98 Zn 0.02 I 2 thin film have acted as a Schottky contact in dark and under white light, 460-nm light. The light responsivity has shown a peak at 460-nm chopped light. At a bias voltage of 1, 3, and 5 V, the photocurrent rise and decay times were investigated. The device has shown faster response times for 460-nm light. This fast response was attributed to the high quality of polycrystalline and showed a high quantum efficiency of 9.19 × 10 2 % when it was illuminated by 460-nm light under the bias of 3 V.

The structural properties of Zn-doped and undoped lead iodide ( PbI2 ) nanostructures have been investigated. Zn-doped and undoped of ( PbI2 ) have been grown by chemical technique. Different doped and undoped PbI2 when prepared successfully by thermal evaporation technique an glass substrate at room temperature. Characterization and analysis using scanning electron microscopy (SEM) and X-ray diffraction (XRD) have indicated to the crystalline character. The particle size of Zn-PbI2 is larger than undoped PbI2.