In our previous scientific publications, we have recommended spectrophotometry as a method for determining the molecular mass of silk fibroin. As a result of our research, we were able to obtain hydrolyzed fibroin ("HF") with high polyfunctional high sorption properties from natural silk fibroin by thermal methods under acidic conditions and the influence of UHF rays. We used spectrophotometry to determine the molecular mass of "HF" obtained by two different methods. It was observed that there are differences between the molecular masses of "HF" obtained by thermal methods and under the influence of ultra-high frequency (UHF) rays. It was found that the molecular mass of "HF" obtained thermally under acidic conditions was 246,6 kDa, and the molecular mass of "HF" obtained under the influence of UHF rays was 307 kDa. The main reason for the different molecular masses of "HF" was considered to be the fact that the process duration of "HF" production methods varies.

Отправка автору номера почтового отправления: 12.04.2022 Публикация на сайте статей и журнала: 25.03.2022 Статьи принимаются: до 15.03.2022 (включительно) Выходные данные статьи и справка о публикации: в день оплаты статьи Рассылка печатных журналов и оттисков: 05.04.2022

Thermodynamic calculations have been carried out for growing crystalline Si1-xGex solid solution epitaxial films on Si<100> and Si<111> substrates from a tin solution-melt by liquid-phase epitaxy. Nanoclusters are thought to be involved in crystal growth. To determine the optimal conditions for obtaining a Si1-xGex crystal from a Si-Ge-Sn solution system, we focused on the change in Gibbs energy and the size of the nanoclusters involved in crystal formation. On this basis, a film with a thickness of 5 µm to 8 µm was experimentally obtained in the temperature range from Тc.s.=1135 K (crystallization start temperature) to Тc.t.=1023 K (crystallization termination temperature). It was also possible to reduce the dislocation density at the substrate-film boundary (up to 3 ´ 104 cm-2) and along the growth direction (film surfaces up to 8 ´ 103 cm-2). A method of thermodynamic prediction for obtaining semiconductor structures has been developed.

Thermodynamic calculations were performed to determine the optimal conditions for the growth of germanium epitaxial layers from a Ge-Sn solution (system) to a germanium substrate. The determination of the optimal conditions was based on the change in the Gibbs energy values of the system during the crystallization process and the size of the crystal-forming nanoclusters. Based on the results obtained, we determined the optimal conditions for obtaining low-dislocation, crystalline perfect germanium epitaxial layers from a liquid tin solution, and recommended starting the crystallization process at 923 K and finishing at 800 K. When the temperature drops below 800 K, the formation of Ge1-xSnx epitaxial layers from the Ge-Sn solution was observed.