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The variation of each piezoresistor each piezoresistorThe variation of for Y-axis acceleration for X-axis acceleration t -1 1'Three axis piezoresistive accelerometer was fabricated by polysilicon layer using SDB(si1icon direct bonding) technology and LPCVD. The variations of stress according to each direction were utilized to detect the three dimensional acceleration and eliminate cross-axis sensitivities.TCO (temperature coefficient of offset) shifts for X, Y and Z-axis Wheatstone bridge outputs were only about 0 -0.07[%F.S.], 0.028--0.016[%F.S.] and 0.007--0.004[%F.S.] in the 25 ' C -160°C range respectively. The sensitivities of fabricated sensor for X, Y and Z-axis acceleration were about O.O6[mV/V * g], O.OS[mV/V g] and O.l3[mV/V g] at a room temperature. The cross-axis sensitivity for X, Y and Z-axis acceleration was about O.O093[mV/V * g], which stands for the elimination of crossaxis sensitivities as designed.

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