Geiger-mode avalanche photodiodes (GM-APDs) use the avalanche mechanism of semiconductors to amplify signals in individual pixels. With proper thresholding, a pixel will be either "on" (avalanching) or "off." This discrete detection scheme eliminates read noise, which makes these devices capable of counting single photons. Using these detectors for imaging applications requires a well-developed and comprehensive expression for the expected signal-to-noise ratio (SNR). This paper derives the expected SNR of a GM-APD detector in gated operation based on gate length, number of samples, signal flux, dark count rate, photon detection efficiency, and afterpulsing probability. To verify the theoretical results, carrier-level Monte Carlo simulation results are compared to the derived equations and found to be in good agreement.

The Center for Detectors at Rochester Institute of Technology and Raytheon Vision Systems (RVS) are leveraging RVS capabilities to produce large format, short-wave infrared HgCdTe focal plane arrays on silicon (Si) substrate wafers. Molecular beam epitaxial (MBE) grown HgCdTe on Si can reduce detector fabrication costs dramatically, while keeping performance competitive with HgCdTe grown on CdZnTe. Reduction in detector costs will alleviate a dominant expense for observational astrophysics telescopes. This paper presents the characterization of 2.5µm cutoff MBE HgCdTe/Si detectors including pre-and post-thinning performance. Detector characteristics presented include dark current, read noise, spectral response, persistence, linearity, crosstalk probability, and analysis of material defects.

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