Absorption and fluorescence spectra of Nd3 +were measured in potassium tantalum gallate, lead bismuth gallate (PBG), fluorozirconate (ZBLAN), and Ge-Ga-S glasses. A Judd -Ofelt analysis was performed to determine the spontaneous emission probability and stimulated emission cross section of the4 F3/2 ?4 I11/2 transition of Nd3 +. Raman spectra were studied to clarify the maximum phonon energies of the glasses. The fluorescence of the1 G4?3 H5 transition of Pr3 + in a dehydrated PBG glass was observed for the first time to our knowledge. The PBG glass has a higher quantum efficiency than that of ZBLAN glass based on the Judd -Ofelt analysis.

As the semiconductor design rules shrink down, process margins are getting narrower, and thus, it is getting more important than ever to monitor pattern profile and detect minor structure variation. A breakthrough technology has been introduced as a solution to this concern. The new technology converts the fluctuation of polarization ingredient, which is caused by form birefringence, into light intensity variations as an optical image. This technology, which is called Pattern Edge Roughness (PER) inspection mode, is proved to be effective for 55nm production process. We also studied the possibility of the macro inspection method for half pitch 32nm technology node through FDTD method.

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