Professor Ghowsi changed his field to chemistry and obtained a Ph.D with a major in analytical chemistry and a minor in physical chemistry from Louisiana State University, USA, in 1990. Currently Professor Ghowsi is a member of IEEE. He has been a faculty member at Texas Tech Chemistry. After moving to Iran, he became a faculty member in Chemistry Department, Majlesi Branch, Islamic Azad University, Iran. His research interest are home made capillary electrophoresis with contactless electrode as a detector, new electrokinetic phenomenon called field effect electroosmosis and a new look at capillary electrophoresis and micellar electrokinetic capillary chromatography. ContentsPreface XI Section Field Effect Electrophoresis 1 Chapter Field-Effect Electro-osmosis -a New Dimension in Capillary Zone Electrophoresis 3 Kiumars Ghowsi, Hosein Ghowsi and M. Razazie Section Capillary Electrophoresis 13 Chapter Use of Amino Acid-Based Ionic Liquids in Capillary Electrophoresis 15 Constantina P. Kapnissi-Christodoulou Chapter Importance of Treatment Process on the Analysis of Penicillins in Milk Samples by Capillary Electrophoresis 31

Two new, fundamental equations for micellar etectrokinetic capfllary chromatography (MECC) have been derived, which are analogous to the corresponding capillary zone electrophoresis (CZE) equations for the resolution and the migration time. The components In the theoretical plate height expression for MECC are compared with the appropriate parameters of the Van Deemter equation. MECC optimum resolution has been found for neutral solutes In three cases, where the migration mobility of the micelle Is negative, zero, and positive. For the first case, which Is similar to the CZE one, the condition has been found that makes the resolution approach Infinity. For the two cases of positive and zero migration mobility of micelle, the optimal ranges of the capacity factors for good resolution and resolution per unit time have been found to be between 2 and 5. These optimal ranges approximate to that for conventional column chromatography, even though the physical causes of flow are different.

An analytical model for the growth kinetics of the anodic oxidation of Si is developed, in which oxidant anions are drifted across the as-grown SiO2 by the electric field from an applied constant voltage. Literature evidence for an anionic transport mechanism is reviewed. The theoretical model derived for the film growth rate is consistent with an empirical relation due to Jain et al., r(t) = at 1/2 + ro, where r(t) represents the oxide thickness as a function of time, and a and ro are constants (3). The net anion mobility was calculated using the model and earlier experimental results. Electronic current density, the major total current component, is shown to be nonohmic and space charge limited. Equations are derived, each as a function of time, for the total current density, the electronic current density, and the ionic efficiency during anodic oxidation. These theoretical predictions are in good agreement with the available experimental data.At present, the technique most commonly used for fabrication of SiO2 films in electronic devices has been the thermal oxidation of silicon. On the other hand, oxide films can be grown on silicon by an electrochemical process (1-4). The electrochemical process has a number of advantages, low cost and the use of room temperature, which makes this process a very good candidate for growing insulator layers on hydrogenated amorphous silicon films. Amorphous Si:H films are unstable at high temperature (above 300~176 since the H evolves and causes the films to lose their desirable properties. Oxide insulation layers are also used to make low-cost, high-efficiency solar cells and integrated thin film transistor arrays (TFT) for image sensor and large-area liquid displays (5, 6). Another potential application is growing very thin silicon dioxide layers (20-200A) for short channel MOSFET and EPROM devices (7). Many theoretical papers, e.g., (8)(9)(10)(11)(12)(13)(14), in addition to experimental investigations, e.g., (15-28), have followed the original work by Cabrera and Mott (8); however, still more work is necessary for a complete understanding and adequate control of the anodic process.In this paper, an anlaytical model for the constant voltage anodic oxidation of silicon has been developed. The experimental results and an empirical relation found by Jain et al.(3) are compared with the theoretical growth rate equations. Theoretical ModelTwo basic steps for the constant voltage anodic oxidation of Si are illustrated in Fig. 1. First, it is assumed that the anions are transported across the oxide film and, second, that the anions react with the silicon surface.The first assumption of this model is that anions are the dominant species moving across the oxide. It has been a controversial issue for the anodic oxidation of silicon whether, during growth, the cation, the anion, or both, are moved across the thickening oxide film. Schmidt and Owen (1) labeled an oxide film on silicon by anodizing it in tetrahydrofurfuryl alcohol containing 32p as phosphate. When this radioactive film ...

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The high frequency eonductances (0.5-25 MHz) of three binary electrolytes NaC1, K2SO4, and K3Fe(CN)6 have been measured in aqueous solution by a commercial network analyzer. The cell used for the experiments is a capacitive cell, or so-called condenser-type cell. A theoretical circuit model, which incorporates the Debye-Falkenhagen dispersion in a rigorous manner, has been developed for this type of cell and low field conditions. A maximum conductance at a specific high frequency has been observed at a certain concentration for each electrolyte due to the bulk circuit elements interaction and an expression has been derived that enables comparison of the experimental data with numerical solutions. The calculations, based on the classical interpretation of ionic conductance, are in satisfactory agreement with experimental results for the lower concentrations only. Some aspects of the high frequency conductance in capacitive cells, such as the role of the Debye-Falkenhageri effect which has been ignored or misrepresented previously, are clarified in this paper 9