I n this paper, we proposed a new lOOV rated power MOSFET, called "VLMOS @erfical &OCOS M-FEI)", and investigated characteristics of the VLMOS under high temperature. From simulation and experimental results, we verified that it overcame the "Si limit" and had superior temperature characteristics in specific on-resistance. This means that the VLMOS is excellent for wide-temperature range operations, especially for automotive applications.

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