In this paper, a class of wideband filtering microstrip (MS)‐to‐microstrip (MS) vialess vertical transition is proposed and demonstrated on coplanar waveguide (CPW) multi‐mode resonator (MMR) formed on their common ground plane. Then, resonant mode in the proposed CPW MMR can be properly excited by setting a certain offset distance between two feeding points, which realizes good signal transmission between the top‐ and bottom‐layer MS lines over a wide frequency range. After that, to facilitate the design process, a synthesis design method is introduced for application in design of the proposed MS‐to‐MS vialess vertical transition with the prescribed design specifications. Finally, by virtue of the proposed CPW resonator, one design example, that is, a four‐pole wideband filtering MS‐to‐MS vialess vertical transitions, are designed, fabricated, and measured. The expected responses, simulated results and measured results of the proposed four‐pole MS‐to‐MS vialess vertical transition is in reasonably good agreement with each other, thus firmly validating the claimed superior performance of the proposed MS‐to‐MS vialess vertical transition on MMR.
In this letter, a novel lumped Wilkinson power divider (WPD) introducing capacitors on the isolation R of ultra wideband with good isolation and insertion loss (IL) performance is proposed with the help of gallium arsenide (GaAs) technology. With the even and odd method, the proposed WPD is better illustrated. The fractional bandwidth (FBW) is 104% (3-9.5 GHz). Besides, the return loss is better than 13.7 dB, and the IL is better than 0.62 dB within the passband. The isolation is better than 19.5 dB from 3 to 9.5 GHz. Finally, to better illustrate the design conception, it has been fabricated on GaAs integrated passive device technology with size of 1.37 Â 0.971 mm 2 , that is, 0.1 Â 0.072 λ g 2 , measured by on-wafer probing. All the final results of the proposed WPD are reasonably matched well.
In this article, a novel topology of wideband on-chip Wilkinson power divider (WPD) with good insertion loss (IL) performance is proposed and demonstrated on gallium arsenide (GaAs)-based integrated passive device (IPD) technology. The proposed WPD is further analyzed by the even and odd method.To verify the advantage of the proposed WPD against the conventional one, two examples are numerically investigated, showing that the proposed one achieves better performance in terms of IL and isolation. In addition, the proposed design achieves a miniature area and small amplitude and phase imbalance (AI) performance. The fractional bandwidth (FBW) of the proposed WPD is 100% (6-18 GHz), where the magnitude imbalance is less than 0.08 dB and phase imbalance is better than 0.4 . Furthermore, the minimum IL is better than 0.96 dB and return loss is better than 13.7 dB within the core passband. Meanwhile, the isolation of the WPD is better than 17.6 dB. Finally, to further demonstrate our design conception, the proposed WPD has been fabricated on GaAs IPD technology with size of 1.5 Â 0.9 mm 2 , and measured by on-wafer probing. All the simulated and measured results of the proposed WPD are matched reasonably well with each other, thus firmly validating the claimed superior performance of the proposed WPD in the wide operating bandwidth, low IL, and high isolation.
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