We have investigated solution-processed tungsten-doped crystalline indium oxide (In2O3:W) as a function of the W content and their implementation in TFTs also employing spray coated Y2O3 gate dielectrics, and gold source and drain contacts. We showed that tungsten doping practically has no effect on the optical band gap whereas it shifts up the Urbach tail energy of In2O3:W films. The TFT performance employing In2O3:W channels also seems to decline at high tungsten concentration. Negative and positive bias stress under (dark) ambient conditions of TFTs employing In2O3:W(0.1 at%) showed remarkable improvement in their stability characteristics compared to the un-doped ones. This is evidenced by significantly smaller changes of the threshold voltage and subthreshold swing with insignificant change of the electron mobility that was practically unaffected under negative bias voltage. The negative bias stress results were interpreted in terms of the higher W-O bond dissociation energy compared a)