No abstract

This paper demonstrates ion implanted lateral GaN MISFETs using double ion implantation technology, which enables us to form Si ion implanted source/drain regions in Mg ion implanted p-well fabricated on free-standing GaN substrates. Maximum drain current of 39 mA/mm and maximum transconductance of 4.5 mS/mm for GaN MISFET with a gate length of 2 μm at an estimated Mg surface concentration of 2.2 × 1018cm-3were obtained. A threshold voltage was-0.5 V for the device. These results show that we successfully formed Si ion implanted n-type regions in the Mg ion-implanted layer and achieved innovative performance.