In this paper, an ultra-low-power integrated RF front end for multi-standard is proposed. It contains a current-reuse low-noise amplifier (LNA) and a single-balanced mixer. The double resonances network helps to achieve a good input impedance matching in the required band and suppress out-of-band noise. The stacked common source (CS) LNA is adopting current-reuse of the two amplifier stages and re-using bleeding current of the mixer, which save working current considerably. By employing forward body bias technique, the proposed circuit can operate at a reduced supply voltage. In addition, the local oscillator (LO) signal forward body bias technique improves the transistors' switching characteristic, which optimizes noise figure (NF) and linearity performances simultaneously. Fabricated in the chartered 0.18-µm RF CMOS technology, the S11 of the front-end is below -14 dB in 935~960 MHz, below -11 dB in 1805~2483 MHz. It achieves a conversion gain of 18.6~20.8 dB, the double sideband (DSB) NF of 2.3~5.1 dB. The IIP3 are -8.2 dBm at 935 MHz and -9.8 dBm at 2100 MHz. It consumes 2.1 mA from a 1 V supply voltage and occupies an active area of only 0.61 × 0.53 mm 2 .

Abstract. In this paper, an ultra-low-power integrated RF front-end for UWB system is proposed.It contains a single-ended low noise amplifier (LNA) and a double balanced mixer. The resistive shunt feedback topology is employed to achieve a good input impedance matching in the whole UWB band. The stacked common-source (CS) LNA is adopting current-reuse and forward body bias techniques to reduce working current and voltage considerably. A transformer network is employed between LNA and double balanced mixer, which not just helps to convert the singleended signal to differential signal, but also makes a great contribution to save the power consumption of the front-end circuit. Fabricated in the TSMC 0.18-μm RF CMOS technology, the S11 of the front-end is below -10dB in 3.1~10.6GHz. It achieves a conversion gain of 18.3~20.5dB, the double sideband (DSB) NF of 4.3~6.1dB. The IIP3 are -3.8dBm at 4.5GH. It consumes 2.4mA from a 0.8V supply voltage and occupies an active area of only 0.86*0.52 mm 2 .

No abstract