The high-k Ta2O5 films deposited on the polycrystalline silicon treated with different postrapid thermal annealing temperatures were formed as high-k interdielectrics. Physical and electrical characteristics of the Ta2O5 dielectrics were investigated with x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and electrical analysis. The annealing at 800 °C was found to be the optimal condition to reduce the defects and interface traps existed in the interface between the Ta2O5 dielectric and polysilicon to fabricate a well-crystallized film with higher breakdown field, lower leakage current and smaller charge trapping rate. This Ta2O5 dielectric shows promise for future generation of nonvolatile memory.

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