Physical and electrical characteristics of the high-k Nd2O3 polyoxide deposited on polycrystalline silicon

Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

“…In order to overcome the aforementioned problem, high dielectric constant (Ä) gate has been proposed as an alternative gate dielectric. Numerous high Ä materials (Ta 2 O 5 [7], Y 2 O 3 [8][9][10], La 2 O 3 [11], Nd 2 O 3 [12], Sc 2 O 3 [13], HfO 2 [14][15][16], and ZrO 2 [3,6,14,15,17]) have been extensively investigated and reported. Of these high Ä materials, ZrO 2 may be considered as a potential candidate for the near future generation technology nodes.…”

Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

“…Benefit from its growth mechanism controlled by a self-limited surface reaction, atomic layer deposition (ALD) is being considered as a promising deposition technique to produce high quality high-k thin films with excellent conformality and precise thickness controllability [ 4 ]. However, ALD is a low-temperature deposition technique, thus high temperature post-deposition annealing (PDA) is needed to eliminate trapped charges and dangling bonds in high-k dielectric films after the deposition process [ 5 , 6 ]. In addition, the annealing treatment can also be of help to reduce interface trap density ( D it ) at the insulator/semiconductor interfaces [ 7 ].…”