Currently 2D crystals are being studied intensively for use in future nano-electronics, as conventional semiconductor devices face challenges in high power consumption and short channel effects when scaled to the quantum limit. Toward this end, achieving barrier-free contact to 2D semiconductors has emerged as a major roadblock. In conventional contacts to bulk metals, the 2D semiconductor Fermi levels become pinned inside the bandgap, deviating from the ideal Schottky-Mott rule and resulting in significant suppression of carrier transport in the device. Here we realized MoS 2 polarity control without extrinsic doping by employing 1D elemental metal contact scheme. Use of high work function palladium (Pd) or gold (Au) achieved high quality p-type dominant contact to intrinsic MoS 2 , realizing Fermi level de-pinning. Field-effect transistors (FET) with Pd edge contact and Au edge contact show high performance with the highest hole mobility reaching 330 cm 2 /Vs and 432 cm 2 /Vs at 300 K respectively. The ideal Fermi level alignment allows creation of p-and n-type FETs on the same intrinsic MoS 2 flake using Pd and low work function molybdenum (Mo) contacts, respectively. This device acts as an efficient inverter, a basic building block for semiconductor integrated circuits, with gain reaching 15 at V D =5 V.

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Objective: The aim of this study was to investigate the clinical characteristics of sepsis-induced acute kidney injury (AKI) in patients undergoing continuous renal replacement therapy (CRRT).Methods: From 2011 to 2015, we enrolled 340 patients who were treated with CRRT for sepsis at the Presbyterian Medical Center. In all patients, CRRT was performed using the PRISMA platform. We divided these patients into two groups (survivors and non-survivors) according to the 28-day all-cause mortality. We compared clinical characteristics and analyzed the predictors of mortality.Results: The 28-day all-cause mortality was 62%. Survivors were younger than non-survivors and had higher platelet counts (178 ± 101 × 103/mL vs. 134 ± 84 × 103/mL, p < .01) and serum creatinine levels (4.2 ± 2.8 vs. 3.3 ± 2.7, p < .01). However, survivors had lower red blood cell distribution width (RDW) scores (14.9 ± 2.1 vs. 16.1 ± 3.3, p < .01) and APACHE II scores (24.5 ± 5.8 vs. 26.9 ± 5.7, p < .01) than non-survivors. Furthermore, survivors were more likely than non-survivors to have a urine output of >0.05 mL/kg/h (66% vs. 86%, p = .001) in the first day. In a multivariate logistic regression analysis, age, platelet count, RDW score, APACHE II score, serum creatinine level, and a urine output of <0.05 mL/kg/h the first day were prognostic factors for the 28-day all-cause mortality.Conclusion: Age, platelet count, APACHE II score, RDW score, serum creatinine level, and urine output the first day are useful predictors for the 28-day all-cause mortality in sepsis patients requiring CRRT.

2D molybdenum ditelluride (MoTe2) has recently received significant attention due to its unique phase transition and ambipolar behavior as well as thickness‐dependent bandgap. The phase transition and electrical breakdown of various thickness MoTe2 field‐effect transistors observed under high electric fields are addressed. Interestingly, the MoTe2 exhibits phase transition from a semiconducting 2H phase to a metallic 1T′ almost simultaneously with electrical breakdown, and this is confirmed by a Raman peak of 1T′‐MoTe2 at 125 cm−1. Using Raman mapping results of MoTe2 FETs obtained after the breakdown, it is revealed that the phase transition is initiated from the metal contacting electrode regions of source and drain. All the Raman peaks of MoTe2 shifted to low frequency with increasing drain voltage. Based on the Raman peak shifts, the temperature change in the MoTe2 FETs while device operation is in progress is estimated. The maximum temperature and dissipated power of a tri‐layer MoTe2 device are found to reach 495 K and 5.85 mW, respectively, at an electric field of 6.5 V µm−1. This research provides guidelines for circuit design toward the application of 2D semiconductor devices, related to the energy dissipation and electrical breakdown unique to 2D phase transitional materials.

Backgound: This study evaluated whether the hydration status affected health-related quality of life (HRQOL) during 12 months in peritoneal dialysis (PD) patients.Methods: The hydration status and the HRQOL were examined at baseline and after 12 months using a bioimpedance spectroscopy and Kidney Disease Quality of Life-Short Form, respectively in PD patients. Four hundred eighty-one patients were included and divided according to the baseline overhydration (OH) value; normohydration group (NH group, -2L≤ OH ≤+2L, n=266) and overhydration group (OH group, OH >+2L, n=215). Baseline HRQOL scores were compared between the two groups. The subjects were re-stratified into quartiles according to the OH difference (OH value at baseline - OH value at 12 months; <-1, -1 - -0.1, -0.1 - +1, and ≥+1L). The relations of OH difference with HRQOL scores at 12 months and the association of OH difference with the HRQOL score difference (HRQOL score at baseline - HRQOL score at 12 months) were assessed.Results: The OH group showed significantly lower baseline physical and mental health scores (PCS and MCS), and kidney disease component scores (KDCS) compared with the NH group (all, P<0.01). At 12 months, the adjusted PCS, MCS, and KDCS significantly increased as the OH difference quartiles increased (P<0.001, P=0.002, P<0.001, respectively). In multivariate analysis, the OH difference was independently associated with higher PCS (β = 2.04, P< .001), MCS (β=1.02, P=0.002), and KDCS (β=1.06, P<0.001) at 12 months. The OH difference was independently associated with the PCS difference (β = -1.81, P<0.001), MCS difference (β=-0.92, P=0.01), and KDCS difference (β=-0.90, P=0.001).Conclusion: The hydration status was associated with HRQOL and increased hydration status negatively affected HRQOL after 12 months in PD patients.