Nanoscale (B28 nm) non-volatile multi-level conductive-bridging-random-access-memory (CBRAM) cells are developed by using a CuO solid-electrolyte, providing a V set of B0.96 V, a V reset of BÀ1.5 V, a B1 Â 10 2 memory margin, B3 Â 10 6 write/erase endurance cycles with 100 ms AC pulse, B6.63 years retention time at 85 1C, B100 ns writing speed, and multi-level (four-level) cell operation. Their nonvolatile memory cell performance characteristics are intensively determined by studying material properties such as crystallinity and poly grain size of the CuO solid-electrolyte and are found to be independent of nanoscale memory cell size. In particular, the CuO solid-electrolyte-based CBRAM cell vertically connecting with p/n/p-type oxide (CuO/IGZO/CuO) selector shows the operation of 1S(selector)1R(resistor), demonstrating a possibility of cross-bar memory-cell array for realizing terabitintegration non-volatile memory cells.

The p-type channel of a nanoparticle organic memory field effect transistor (NOMFET) was fabricated by evaporating a thin Au layer, curing at 700 °C, and evaporating pentacene. The resulting NOMFET showed a facilitating ac-pulse drain current after programming and a depressing ac-pulse drain current after erasing that mimicked the behavior of biological synapses. The facilitating and depressing current ratio could be adjusted by using the program or erase voltage; i.e., the facilitating current increased with the program voltage, and the depressing current ratio increased with the erase voltage.