No abstract

This study has been carried out aiming to have the materials for the use of selective control of specific functional component contents of vegetables and fruits by using LED light source in future through examination and analysis on the influence of LED light source (385 nm, 470 nm, 525 nm, and 630 nm) on the functional components and quality change of immature strawberry. Soluble solid content was 9.87% immediately after harvest and in 4 storage days, it gradually increased as 12.77% for the test group which is higher than control group of 10.97%. Acidity increased gradually during 3 storage days and then decreased a little at the 4 th day from the beginning of storage irrespective of LED treatment for every group under treatment. Vitamin C, anthocyanin and total phenol content increased gradually for 4 storage days due to LED treatment for control group and test group. Each nutrient was as 54.28 mg/100 g, 6.89 mg/100 g, and 129.5 mg/100 g immediately after harvest and in 4 storage days, they appeared to be 78.70 mg/100 g, 12.48 mg/100 g, and 172.75 mg/100 g for the test group, higher than that of control group which were 71.64 mg/100 g, 9.89 mg/100 g, and 151.00 mg/100 g. Consequently, LED irradiation seemed to have affected the nutrients and quality of strawberry.Additional key words: acidity, anthocyanin, soluble solid content, total phenol, vitamin C Hort.

Nanoscale (B28 nm) non-volatile multi-level conductive-bridging-random-access-memory (CBRAM) cells are developed by using a CuO solid-electrolyte, providing a V set of B0.96 V, a V reset of BÀ1.5 V, a B1 Â 10 2 memory margin, B3 Â 10 6 write/erase endurance cycles with 100 ms AC pulse, B6.63 years retention time at 85 1C, B100 ns writing speed, and multi-level (four-level) cell operation. Their nonvolatile memory cell performance characteristics are intensively determined by studying material properties such as crystallinity and poly grain size of the CuO solid-electrolyte and are found to be independent of nanoscale memory cell size. In particular, the CuO solid-electrolyte-based CBRAM cell vertically connecting with p/n/p-type oxide (CuO/IGZO/CuO) selector shows the operation of 1S(selector)1R(resistor), demonstrating a possibility of cross-bar memory-cell array for realizing terabitintegration non-volatile memory cells.

In a CuxO solid-electrolyte-based CBRAM cell using an Ag top electrode, electroforming-free and electro-reset processes could be achieved at a specific ex situ annealing temperature of the solid electrolyte.