Molybdenum disulfide (MoS2) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor (MIS) FETs, where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Moreover, thin MoS2 MISFETs have always shown large hysteresis with unpredictable negative threshold voltages. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) using NiOx Schottky electrode which makes van der Waals interface with MoS2. We thus expect that the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by interface traps or an on-state gate field. Our MESFETs with a few and ∼10 layer MoS2 demonstrate intrinsic-like high mobilities of 500-1200 cm(2)/(V s) at a certain low threshold voltage between -1 and -2 V without much hysteresis. Moreover, they work as a high speed and highly sensitive phototransistor with 2 ms switching and ∼5000 A/W, respectively, supporting their high intrinsic mobility results.

We report on the energy band gap and optical transition of a series of divalent metal ion (Cu(2+), Ni(2+), Zn(2+), and Co(2+)) modified DNA (M-DNA) double crossover (DX) lattices fabricated on fused silica by the substrate-assisted growth (SAG) method. We demonstrate how the degree of coverage of the DX lattices is influenced by the DX monomer concentration and also analyze the band gaps of the M-DNA lattices. The energy band gap of the M-DNA, between the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), ranges from 4.67 to 4.98 eV as judged by optical transitions. Relative to the band gap of a pristine DNA molecule (4.69 eV), the band gap of the M-DNA lattices increases with metal ion doping up to a critical concentration and then decreases with further doping. Interestingly, except for the case of Ni(2+), the onset of the second absorption band shifts to a lower energy until a critical concentration and then shifts to a higher energy with further increasing the metal ion concentration, which is consistent with the evolution of electrical transport characteristics. Our results show that controllable metal ion doping is an effective method to tune the band gap energy of DNA-based nanostructures.

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We report on our study of RDX and HMX, two of the most commonly used explosive materials, in bulk pellets with reflection terahertz time-domain spectroscopy in the frequency range of 0.3–3 THz. The maximum entropy method was utilized to correct our raw reflection data against the phase error due to the relative displacement between the sample and the reference. Both the refractive index n and the extinction coefficient k in the terahertz region were acquired for these two explosives without a Kramers-Kronig analysis. Both RDX and HMX exhibit a series of distinct peaks not quite detectable in the more conventional transmission-type measurements due to their high terahertz absorptivity. Our results are compared with the literature data on powder samples.

Terahertz electrodynamics of superconducting NbTiN has been studied in the spectral range of 8-70 cm–1 above and below the critical temperature of Tc = 14.1 K. Our transmission terahertz time-domain spectroscopy technique allows for independent and accurate determination of both the real part σ1 and the imaginary part σ2 of the optical conductivity σ as a function of frequency ω and temperature T without a Kramers-Kronig analysis. A clear signature of the superconducting energy gap Δ(T) is observed in the real part σ1 of the optical conductivity below Tc, with 2Δ(0) = 36.5 cm−1 corresponding to 2Δ(0)/kBTc = 3.72. No indication of strong-coupling effects was observed in the imaginary part σ2 toward zero frequency. Our results, including the temperature dependence of the penetration depth λ(T), are in excellent quantitative agreement with weak coupling BCS theory and Mattis-Bardeen formula.