In this paper, we report on the successful fabrication of β-Ga2O3 thin films by spray-pyrolysis technique. We provide the data on the dependence of the quality of the β-Ga2O3 films on the regimes and parameters of fabrication. Scanning electron microscopy, atomic force microscopy and optical spectroscopy are used to analyze film properties. X-ray diffraction phase analysis of the films after heat treatment at 900°C confirms the formation of β-Ga2O3 crystallites.

β-Ga2O3 thin films were obtained by the sol-gel method on sapphire and quartz substrates, as well as on Cu-O buffer layers. It was shown that the sol-gel method allowed to obtain β-Ga2O3 thin films with good optical and structural properties by using X-ray diffraction, scanning electron microscopy and optical spectroscopy. The energy of the optical band gap of Ga2O3 films calculated by the Tauc plot varied from 4.39 to 4.59 eV.