We report the fabrication of high performance singlepolysilicon npn bipolar transistors using a low cost 2 0 0 " 0.35pm bipolar technology. The devices feature record cut-off frequency and maximum oscillation frequency of 35GHz and 54GHz respectively, comparable to state-of-the-art results from more complex double-polysilicon bipolar processes.

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In this paper we investigate, in single-polysilicon quasi self-aligned bipolar transistors of an advanced 0.5 µm planar bipolar-complementary metal-oxide semiconductor (BiCMOS) technology, the base-emitter junction characteristics in reverse bias conditions and its influence on the behaviour of other neighbouring junctions, i.e. collector and substrate. We will show, due to the high emitter and base doping, the non negligible presence of impact-ionization effects superimposed over the well known reverse tunnel current even at moderate reverse bias. The related light emission coming from the energetic carriers in the impact-ionization regime can influence the collector and even the substrate junctions. These investigations are confirmed by temperature measurements and the results suggest that attention should be paid also to these secondary, higher order, effects during device scaling-down in BiCMOS circuitry.