The behavior of the electron impact-ionization coefficient αn in In0.53Ga0.47As is measured with unprecedented sensitivity down to very low electric fields. The data are derived from measurements of the multiplication coefficient M−1 in suitably designed heterojunction bipolar transistors. Previously available data are extended by two orders of magnitude in the low field domain, down to αn≊1 cm−1. The experimental behavior of αn at fields below 200 kV/cm is in agreement with the theoretical prediction of a weak field dependence of αn at low electric fields.

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We present a detailed experimental and theoretical investigation of hot electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) operating at low current densities. Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission. A new general purpose weighted Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the device is demonstrated. Good agreement is found between theory and experimen

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