Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications

Vendrame, L.; Pavan, Paolo; Corva, Giulio; Nardi, A.; Neviani, A.; Zanoni, Enrico

doi:10.1016/s0026-2714(99)00217-6

Cited by 27 publications

(16 citation statements)

References 51 publications

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“…Hot-carrier stressing can cause degradation in BJT characteristics by at least two mechanisms [2]. First, it can break weak interface bonds to create defects Nit that provide sites for recombination or for trap-assisted tunneling.…”

Section: Discussionmentioning

confidence: 99%

“…For the low-bias base current in the Gummel plot, it likely results from Shockley-Read-Hall (SRH) recombination in the depletion region via trap states. The defects responsible for increasing IST and IB are often attributed to be located at the oxide/silicon interface, where the stress is expected to produce damage [2].…”

Section: Discussionmentioning

confidence: 99%

“…The difference in the behaviors of I ST and I B implies that the defects involved in determining I ST may be not the same defects as those involved in determining IB. The other possibility is that after IST reaches saturation for Q ST > 5 2 10 3 C, the charge trapping becomes appreciable so that the surface potential S is raised significantly, leading to further increase in IB that is a function of both Nit and S [2]. First, stressing could remove the benefits of fluorine, reducing I BF before stressing to I 0 BF after stressing.…”

Section: Discussionmentioning

confidence: 99%

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Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine

Sheng

McKinnon

McAlister

et al. 2003

IEEE Trans. Electron Devices

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Abstract-The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon-emitter NPN bipolar transistors have been examined. Forward Gummel plots, base-emitter (BE) diode characteristics, and stress currents were measured during reverse BE bias stress. Fluorinated devices behave similarly under stress to nonfluorinated devices retaining the initial improvement observed in the forward-bias base current, which is due to suppression of recombination in the BE junction depletion regions at the oxide/silicon interface. The benefits of fluorination, and particularly the reduction in base current in fluorinated devices, appear to be robust-that is, there is no evidence that the defects passivated by fluorine are reactivated during stressing, or that fluorination introduces additional defects that are activated under stressing.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine

Sheng

McKinnon

McAlister

et al. 2003

IEEE Trans. Electron Devices

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“…The reliability of Si/SiGe Heterojunction Bipolar Transistors is characterised by emitter metal electromigration when the base-emitter junction is forward biased (current density up to about lO5Ncm2) [I], and by the damage induced by ionising radiation and/or by Hot Carriers (HC) generated under reverse bias condition [2]. In particular, the HC effects at the base-emitter space charge region are today the main reliability concern for advanced bipolar transistors, as Si/SiGe Heterojunction Bipolar Transistors [3,4], because of the high dopant concentrations usually employed in these transistors [3].…”

Section: Introductionmentioning

confidence: 99%

“…Life tests are usually carried out by reverse biasing the base-emitter junction, with or without the collector lead floating [4]. Experimental data demonstrated that the HC induced damage is located around the emitter perimeter [2,4,5]. In particular, in [5] this result was demonstrated by normalising the low frequency noise (LFN) measurements of the base current to the emitter sizes (perimeter or area).…”

Section: Introductionmentioning

confidence: 99%

Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors

Borgarino

Bary²,

Kuchenbecker³

et al.

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00

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In this paper the effects of hot carrier on the correlation resistance in SiGe HBT's are investigated. Before the stress the correlation resistance was found to be comparable with the access series resistance while, after the stress, the correlation resistance decreases and the access series resistance increases. This increase suggests that the stress degrades the access regions of the transistor. On the other hand, the observed behaviour of the correlation resistance is explained in terms of an intrinsic noise source, n-topology based low frequency noise model. It is shown that the correlation resistance is a useful indicator of surface recombination mechanisms. In particular, one intrinsic noise source in the model is associated with the degradation of the extrinsic base surface around the emitter perimeter.

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Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors

Huang

Chen

Huang

et al. 2008

Microelectronics Reliability

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Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications

Cited by 27 publications

References 51 publications

Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine

Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine

Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors

Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors

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