In order to identify an appropriate low-temperature surface passivation that could be used for bulk lifetime estimation of high resistivity (HR) (> 1 k·cm) silicon for radiation detectors, different passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HR magnetic CZ and HR float zone (FZ) substrates. Minority carrier lifetime measurements were performed by means of a μW-PCD set-up. The results show that SiNx PECVD layers deposited at low temperatures (≤ 250°C) may be used to evaluate the impact of different processing steps and treatments on the substrate characteristics for radiation detectors. First results are obtained about a preliminary thermal treatment experiment to evaluate the thermal stability of the passivating layers, as well as the potential impact of the generation of thermal donors on minority carrier lifetime.

With the aim to identify an appropriate lowtemperature surface passivation process that could be used for bulk lifetime estimation of high resistivity (HR) (>lkQcm) silicon for radiation detectors, different candidate passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HR magnetic Czochralski (MCZ) and HR float zone (FZ)) substrates. Minority carrier lifetime measurements were performed by means of a microwave PhotoConductance Decay single point setup. The results show that SiNX PECVD layers deposited at 200°C may be used to evaluate the impact of different processing steps and treatments on the substrate characteristics for radiation detectors.