ratio of 12/1 be employed for silox CVD processing. (iii)The deposition rate decrease with increased flow of nitrogen is attributed to two factors, depression of the sil,ane partial pressure and lowering of the wafer surface temperature.

Vacuum-evaporated palladium was used as catalyst for electroless Ni-P deposition on polyimide and alumina substrates. The effect that varying amounts of Pd had on the early stages of electroless plating was investigated by means of Rutherford backscattering spectrometry and transmission electron microscopy. No significant diffusion of the catalyst into the Ni-P film was observed; in some cases, a small amount of Pd tended to diffuse into the deposited Ni-P film, particularly on po]yimide substrates. The deposition rate of the Ni-P film on po]yimide was always less than that on alumina. An increased amount of catalyst decreased the deposition rate significantly without altering the stoichiometry of the plated film. When less than 10 TM Pd at./cm 2 were evaporated onto the substrate, the catalyst formed clusters of palladium particles on the surface, whereas larger amounts of Pd (e.g., 2 • 10 TM at./cm'-') settled as a continuous film at the substrate.

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