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Articles you may be interested inDistinguishing the effect of surface passivation from the effect of size on the photonic and electronic behavior of porous siliconWe have investigated the influence of the microstructure and chemistry of the surrounding host on the strong visible photoluminescence ͑PL͒ from silicon nanoclusters ͑nc-Si͒ embedded in three different silicon-based dielectric compounds: Si x N y : H , Cl, Si x N y O z : H , Cl, and Si x O z :H,Cl, obtained from silicon nitride films deposited by SiH 2 Cl 2 /NH 3 /H 2 plasma-enhanced chemical vapor deposition at different growth pressures. A blueshift is found in the PL coming from the nc-Si as the content of oxygen in the surrounding host is increased, and a significant improvement in PL intensity is achieved when the nc-Si are well passivated with O instead of H. We discuss the PL behavior in terms of the quantum confinement model and passivation state of the nc-Si surface.

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In this work, relationships between chemical and physical properties of fluorine doped tin oxide films prepared by the chemical spray pyrolysis technique have been studied. Changes in the structural, optical and electrical properties of these films in relation to their doping concentrations determined by the resonant nuclear reaction analysis and x-ray photoelectron spectroscopy (XPS) techniques have been correlated. By XPS measurements, it was found that the fluorine content in the tin oxide films does not induce any chemical shift of the Sn and O core levels. At the same time, XPS measurements are carried out at low binding energy, shown that the valence band of heavy doped tin oxide changes with respect to that determined in SnO2 powder, due to the influence of the fluorine doping. In addition, it was shown that the formation of F–Sn complexes provides a decrease in both the concentration and mobility of the carriers.

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