The lithiated/delithiated vanadium pentoxide films deposited by sol-gel spin coating on indium tin oxide-coated glass substrates were analyzed by sputter-induced photon spectroscopy, X-ray diffraction, and optical absorption techniques. First, it is shown that the crystalline structure of where Li + ion is the host material and x the molar intercalation fraction.During the intercalation reaction, the vanadium atoms are considered to be partially reduced from V 5+ to V 4+ formal oxidation state, when 0 ≤ x ≤ 1. 6 The insertion/deinsertion processes of Li ions into V 2 O 5 matrix are often accompanied by electronic structure changes. V 2 O 5 as base material is semiconductor characterized by an energy gap and Na x V 2 O 5 10 deposited by physical vapor deposition technique.Note that these results were obtained by photoelectron spectroscopy (XPS and UPS). Concerning the deposition methods, they were listed by Granquist. 11 Besides, the properties of V 2 O 5 films show strong dependence on the synthesis procedures. Furthermore, the intercalation of lithium ions into V 2 O 5 leads to several changes in the electronic structure and optical and electrical properties. Hence, various electroanalytical techniques [12][13][14] have been used to explain the mechanisms of Li intercalation into this oxide.Using X-ray diffraction (XRD), optical absorption spectroscopy, and sputter-induced photon spectroscopy (SIPS) techniques, we investigate in this study the effect of Li insertion and deinsertion on the host lattice of V 2 O 5 thin film prepared by sol-gel spin coating procedure.The structure and optical absorption properties of clean, intercalated, and deintercalated V 2 O 5 films are discussed. The luminescence spectra resulting from 5 keV Kr + ion bombardment are also reported. The observed lines are all identified, and their intensities before and after
Ion photon emission in the wavelength range of 280 - 420 nm resulting from 5 Kr+ ion beam sputtering from titanium in the presence and the absence of oxygen was studied experimentally. The observed spectra consist of a series of discrete lines superimposed with a broadband continuum. Discrete lines are attributed to excited neutral Ti I and excited ions Ti II. The differences in the observed intensities of spectral lines are discussed in terms of the electron-transfer processes between the excited sputtered atom and electronic levels of the solid. The radiative dissociation process and breaking of chemical bonds seem to contribute to the enhancement of emitted photons intensity. Continuum radiation was observed and is very probably related to the electronic structure of titanium. The collective deactivation of 3d-shell electrons appears to play a role in the emission of this radiation.
Iron, chromium and aluminum particles sputtered under 5 keV by Kr + ion bombardment at normal incidence from the ternary alloy Fe82Cr6Al12 was simulated. The Stopping and Range of Ions in Matter (SRIM) software combined to a new code-program, called Angulaire, were used to obtain the sputtering yields and angular distributions of the ejected species. The simulation was performed for a large number of incident ions (about 2 × 10 5 ions) and the number of particles emitted in the solid angle corresponding to the probe was counted by a computer. The angular distributions of sputtered particles were compared with the results available in the literature and showed a reasonable agreement. Furthermore, we have demonstrated that the angular distribution of the differential sputtering yields of all ejected species (iron, aluminum, and chromium) from the ternary alloy exhibited an over-cosine tendency.
The sputtering of vanadium particles at normal incidence wassimulated. The SRIM-code combined to a new ANGULAIR and SDTrimSPsimulation was employed to obtain the sputtering yields and the angular distribution of the atoms. The simulation was made for a large number of incident Kr+ions with 5 keV energy, letting the computer count the number of emitted particles in the solid angle. The angular distribution of differential sputtering yields of vanadium shows an over-cosine tendency.
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