We investigate cutting of transparent materials using ultra short laser pulses with pulse durations in the sub to a few ps regime. All compared methods base on nonlinear absorption including ablation cutting and cleaving or selective etching supported by laser induced modification inside the bulk material. For most of the experiments samples of hardened glass (Corning Gorilla®) with thickness up to 700 µm were used, ablation cutting of sapphire is presented additionally. Absorption and modification inside the volume is analyzed in detail, aiming for tailored modifications. Besides optical microscopy a pump probe setup was used. We show results of time resolved absorption measurements of 6 ps pulses focused into the volume. We observe shielding due to the interaction region and accumulation effects influencing the modifications. First results on inscribing and cutting by using beam shaping indicate the importance of tailoring the shape and arrangement of the pulses temporally and spatially. The results presented for the different cutting methods supports an assessment of the individual potential and a selection of the applicable method based on the requirements

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Various effects of postimplantation of silicon ions on boron-implanted layers are reported. The amount of enhanced annealing depends critically on the target temperature during implantation and on the dose of silicon ions used. At 100 keV, a 5×1015/cm2 silicon dose is necessary to create an amorphous layer extending up to the surface at room temperature. Close to 100% of the boron ions located in this layer become electrically active after annealing at 600°C. For boron doses approximately greater than 3×1015/cm2, shallow silicon implantations produce stronger enhanced annealing than expected. For boron doses less than 2×1014/cm2, little or no enhanced annealing is observed.