A complementary MOS 1.2 volt watch circuit using ion implantation

Impurity Atom Distribution Resulting from Thermal Redistribution of an Implanted Impurity Source

“…Now Eq. [4] and Eq. [11] hold only for the case of zero surface concentration during the rediffusion process.…”

“…C(x,t)~(x,~=o= (4nD)1/2 Any discussion of this paper will appear in a Discussion Section to be published in the June 1974 JOURNAL. vice and circuit fabrication (1)(2)(3)(4). An important advantage of this method is that the implanted impurities may be thermally redistributed without concurrent oxidation if the implantation is carried out through an existing oxide layer of sufficient thickness (1,5).…”

“…[5]) and the requirement that the flux of impurities be continuous at the interface (Eq. [4]) 9 The impurity concentration at the oxide-semiconductor interface, gotten by substituting x ----0 in Eq. [8], is given by m…”