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In this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N20 and 02 on (100), (110), and (111) oriented substrates. It was found that (1 10)-oriented Si has the highest growth rate in both N20 and dry 02, and (100) Si has the lowest rate. There is no "crossover" on the growth rate of rapid thermal N20 oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N20. Pressure dependence of rapid thermal N20 oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N20-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N20 or 02 ambient.

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