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Articles you may be interested inMagnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al 0.22 Ga 0.78 N / GaN heterostructures J. Appl. Phys. 94, 5420 (2003); 10.1063/1.1606507 High magnetic field studies of two-dimensional electron gas in a GaN/GaAlN heterostructure: Mechanisms of parallel conduction Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface Appl.

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We report a magnetotransport study of the termination of the spinresolved integer quantum Hall effect by controlled disorder in a gated GaAs/Al x GaAs 1−x heterostructure. We have found that, for a given N th Landau level, the difference in filling factors of a pair of spin-split resistivity peaks δν N = |ν N ↑ -ν N ↓ | changes rapidly from one to zero near a critical density n c . Scaling analysis shows that δν N collapses onto a single curve independent of N when plotted against the parameter (n − n c )/n c for five Landau levels. The effect of increasing the Zeeman energy is also examined by tilting the direction of magnetic field relative to the plane of the twodimensional electron gas. Our experiment suggests that the termination of the spin-resolved quantum Hall effect is a phase transition. PACS number(s):Typeset using REVT E X 1