Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures

Abstract

Articles you may be interested inMagnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al 0.22 Ga 0.78 N / GaN heterostructures J. Appl. Phys. 94, 5420 (2003); 10.1063/1.1606507 High magnetic field studies of two-dimensional electron gas in a GaN/GaAlN heterostructure: Mechanisms of parallel conduction Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface Appl.

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

“…5. The points with the reference marks [15][16][17][21][22][23]28,29 correspond to experimental data, taken from the literature and the points with the letter marks A, B, and C represent our experimental data. The solid line is the fit of the 2DEG effective mass dependence on the probability of wave-function penetration into the barrier of the studied AlGaN/GaN heterostructures.…”

“…We determined the probabilities of the 2DEG wavefunction penetration into the barrier by self-consistent calculation for our AlGaN/GaN samples and for HEMT GaNbased heterostructures reported in the literature [15][16][17][21][22][23]28,29 containing all necessary information for the detailed simulation.…”

“…On leave from Institute of Semiconductor Physics, NASU, 03028 Kiev, Ukraine. JOURNAL OF APPLIED PHYSICS 105, 073703 ͑2009͒ resonance [14][15][16] and magnetotransport [17][18][19] results͒ that the inplane effective mass can exceed the bulk values considerably due to the increasing effect of conduction band nonparabolicity at higher Fermi energy. At the same time, even taking into account this effect, a large scatter of the data is not well understood and uncertainty of the effective mass in 2DEG with different carrier density and spatial confinement is large.…”

“…Even in high-quality AlGaN/GaN heterostructures, the in-plane effective mass of 2D electrons measured by various direct and indirect techniques has shown effective mass enhancement and a large scatter of the data [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] ͑Fig. 1͒.…”

Electron Mobility in an Unintentionally Doped GaN/AlGaN Surface Quantum Well

“…with m * as the in-plane effective electron mass of the GaN [17]. The inverse relaxation time for zero temperature is then expressed in terms of the autocorrelation function for each disorder [12]:…”