This publication details CMOS foundry fabrication, reliability stress assessment, and packaged sensor test results obtained during qualification of the SensL B-Series silicon photomultiplier (SiPM). SiPM sensors with active-area dimensions of 1, 3, and 6 mm were fabricated and tested to provide a comprehensive review of SiPM performance highlighted by fast output rise times of 300 ps and photon detection efficiency of greater than 41%, combined with low afterpulsing and crosstalk. Measurements important for medical imaging positron emission tomography systems that rely on time-of-flight detectors were completed. Results with LSYO:Ce scintillation crystals of 3 × 3 × 20 mm 3 demonstrated a 225 AE 2-ps coincidence resolving time (CRT), and the fast output is shown to allow for simultaneous acquisition of CRT and energy resolution. The wafer level test results from ∼150 k 3-mm SiPM are shown to demonstrate a mean breakdown voltage value of 24.69 V with a standard deviation of 0.073 V. The SiPM output optical uniformity is shown to be AE10% at a single supply voltage of 29.5 V. Finally, reliability stress assessment to Joint Electron Device Engineering Council (JEDEC) industry standards is detailed and shown to have been completed with all SiPM passing. This is the first qualification and reliability stress assessment program run to industry standards that has been reported on SiPM.

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The operation and performance of multi-pixel, Geiger-mode APD structures referred to as Silicon Photomultiplier (SPM) are reported. The SPM is a solid state device that has emerged over the last decade as a promising alternative to vacuum PMTs. This is due to their comparable performance in addition to their lower bias operation and power consumption, insensitivity to magnetic fields and ambient light, smaller size and ruggedness. Applications for these detectors are numerous and include life sciences, nuclear medicine, particle physics, microscopy and general instrumentation. With SPM devices, many geometrical and device parameters can be adjusted to optimize their performance for a particular application. In this paper, Monte Carlo simulations and experimental results for 1mm 2 SPM structures are reported. In addition, trade-offs involved in optimizing the SPM in terms of the number and size of pixels for a given light intensity, and its affect on the dynamic range are discussed.

Abstract-Silicon Photomultiplier (SiPM) detectors are investigated world-wide as a suitable replacement for the conventional vacuum based PhotoMultiplier Tube (PMT) and are enabling applications otherwise not possible with PMT detectors. Progress in recent years has been substantial with SiPM detectors pushing the boundaries in energy and time resolution as well as photon detection efficiency and active surface area. In this paper we report on the performance of a gamma detector comprising latest generation SiPM detectors from SensL coupled to novel Cerium doped Gd3Al2Ga3O12 (GAGG) scintillators from Furukawa, Japan. Both 3mm×3mm N-on-P and P-on-N SiPM detectors have been optically coupled to 3mm×3mm×30mm crystals. An energy resolution (662 keV Cs-137) of 9.4% has been measured for GAGG crystal coupled to a 3mm×3mm N-on-P SiPM detector.