The compliance-current dependence of the resistiveswitching behaviors is investigated in TaN/Cu x O/Cu memory devices with 1R architecture and 1T1R architecture, respectively. The correlation of reset current I reset and ON-state resistance R on can be verified by adjusting the compliance current I comp . Meanwhile, I reset and R on become independent on I comp in the 1R architecture when I comp is below 1 mA. A serious compliance-current overshoot phenomenon is in situ observed in 1R-architecture device, and it remarkably affects the resistive-switching characteristics because the compliance current dominates the memory behaviors. Therefore, resistive-switching investigation based on 1T1R architecture is much more reliable.

The study found a superior PFS after surgery while OS and LRC did not differ between SBRT and surgery. Surgery should be recommended for tumor of high SUV.